MT3S111P(TE12L,F)

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Overview of MT3S111P(TE12L,F)

Part NumberMT3S111P(TE12L,F)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionRF TRANS NPN 6V 8GHZ PW-MINI
DatasheetsDownload MT3S111P(TE12L,F) Datasheet PDFPDF Icon
Price for MT3S111P(TE12L,F)

Specification of MT3S111P(TE12L,F)

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
6V
Frequency - Transition
8GHz
Noise Figure (dB Typ @ f)
1.25dB @ 1GHz
Gain
10.5dB
Power - Max
1W
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 30mA, 5V
Current - Collector (Ic) (Max)
100mA
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-243AA
Supplier Device Package
PW-MINI

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