NDH8502P

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Overview of NDH8502P

Part NumberNDH8502P
ManufacturerFairchild Semiconductor
DescriptionP-CHANNEL MOSFET
DatasheetsDownload NDH8502P Datasheet PDFPDF Icon
Price for NDH8502P

Specification of NDH8502P

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
2.2A (Ta)
Rds On (Max) @ Id, Vgs
110mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
14.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
340pF @ 15V
Power - Max
800mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-TSOP (0.130", 3.30mm Width)
Supplier Device Package
SuperSOT-8

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