NP80N06PLG-E1B-AY

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Overview of NP80N06PLG-E1B-AY

Part NumberNP80N06PLG-E1B-AY
ManufacturerRenesas Electronics America
DescriptionMOSFET N-CH 60V 80A TO263
DatasheetsDownload NP80N06PLG-E1B-AY Datasheet PDFPDF Icon
Price for NP80N06PLG-E1B-AY

Specification of NP80N06PLG-E1B-AY

Status
Obsolete
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Renesas Electronics America Inc
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
128 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
6900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta), 115W (Tc)
Operating Temperature
175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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