NTB10N40

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Overview of NTB10N40

Part NumberNTB10N40
ManufacturerMotorola
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload NTB10N40 Datasheet PDFPDF Icon
Price for NTB10N40

Specification of NTB10N40

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
400 V
Current - Continuous Drain (Id) @ 25C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
500mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2020 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
142W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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