NTBG022N120M3S

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Overview of NTBG022N120M3S

Part NumberNTBG022N120M3S
Manufactureronsemi
DescriptionSIC MOSFET 1200 V 22 MOHM M3S SE
DatasheetsDownload NTBG022N120M3S Datasheet PDFPDF Icon
Price for NTBG022N120M3S

Specification of NTBG022N120M3S

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
onsemi
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
30mOhm @ 40A, 18V
Vgs(th) (Max) @ Id
4.4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3200 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
234W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK-7
Package / Case
TO-263-8, DPak (7 Leads + Tab), TO-263CA

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