NTC020N120SC1

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Overview of NTC020N120SC1

Part NumberNTC020N120SC1
Manufactureronsemi
DescriptionSIC MOS WAFER SALES 20MOHM 1200V
Price for NTC020N120SC1

Specification of NTC020N120SC1

Status
Obsolete
Package
Tray
Supplier
onsemi
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
103A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id
4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
203 nC @ 20 V
Vgs (Max)
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
2890 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
535W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die

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