NTD4856N-1G

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Overview of NTD4856N-1G

Part NumberNTD4856N-1G
Manufactureronsemi
DescriptionMOSFET N-CH 25V 13.3A/89A IPAK
DatasheetsDownload NTD4856N-1G Datasheet PDFPDF Icon
Price for NTD4856N-1G

Specification of NTD4856N-1G

Status
Obsolete
Package
Tube,Tube
Supplier
Rochester Electronics, LLC,onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25C
13.3A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 4.5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2241 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
1.33W (Ta), 60W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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