NTTFS115P10M5

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Overview of NTTFS115P10M5

Part NumberNTTFS115P10M5
Manufactureronsemi
DescriptionMV5_100V_N_P_IN DUALS AND SINGLE
DatasheetsDownload NTTFS115P10M5 Datasheet PDFPDF Icon
Price for NTTFS115P10M5

Specification of NTTFS115P10M5

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
onsemi
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
2A (Ta), 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
120mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id
4V @ 45A
Gate Charge (Qg) (Max) @ Vgs
9.2 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
637 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
900mW (Ta), 41W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-WDFN (3.3x3.3)
Package / Case
8-PowerWDFN

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