NVH4L060N065SC1

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Overview of NVH4L060N065SC1

Part NumberNVH4L060N065SC1
Manufactureronsemi
DescriptionSIC MOS TO247-4L 650V
DatasheetsDownload NVH4L060N065SC1 Datasheet PDFPDF Icon
Price for NVH4L060N065SC1

Specification of NVH4L060N065SC1

Status
Active
Series
Automotive, AEC-Q101
Package
Tube
Supplier
onsemi
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
70mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
4.3V @ 6.5mA
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 18 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
1473 pF @ 325 V
FET Feature
-
Power Dissipation (Max)
176W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4

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