NVH4L160N120SC1

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Overview of NVH4L160N120SC1

Part NumberNVH4L160N120SC1
Manufactureronsemi
DescriptionSICFET N-CH 1200V 17.3A TO247
DatasheetsDownload NVH4L160N120SC1 Datasheet PDFPDF Icon
Price for NVH4L160N120SC1

Specification of NVH4L160N120SC1

Status
Active
Series
Automotive, AEC-Q101
Package
Tube
Supplier
onsemi
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
17.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
224mOhm @ 12A, 20V
Vgs(th) (Max) @ Id
4.3V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 20 V
Vgs (Max)
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
665 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
111W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4

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