NVHL080N120SC1A

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Overview of NVHL080N120SC1A

Part NumberNVHL080N120SC1A
Manufactureronsemi
DescriptionSICFET N-CH 1200V 31A TO247-3
DatasheetsDownload NVHL080N120SC1A Datasheet PDFPDF Icon
Price for NVHL080N120SC1A

Specification of NVHL080N120SC1A

Status
Active
Series
Automotive, AEC-Q101
Package
Bulk,Tube
Supplier
Rochester Electronics, LLC,onsemi
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 20 V
Vgs (Max)
+25, -15V
Input Capacitance (Ciss) (Max) @ Vds
1670 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
178W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3

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