NVJD4152PT1G

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Overview of NVJD4152PT1G

Part NumberNVJD4152PT1G
Manufactureronsemi
DescriptionNVJD4152 - Dual P-Channel Trench
Price for NVJD4152PT1G

Specification of NVJD4152PT1G

Status
Active
Series
Automotive, AEC-Q101
Package
Bulk
Supplier
Rochester Electronics, LLC
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel
FET Feature
Standard
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25C
880mA (Ta)
Rds On (Max) @ Id, Vgs
260mOhm @ 880mA, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
155pF @ 20V
Power - Max
272mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-88/SC70-6/SOT-363

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