NVMFS4C308NWFT1G

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Overview of NVMFS4C308NWFT1G

Part NumberNVMFS4C308NWFT1G
Manufactureronsemi
DescriptionTRENCH 30V NCH
DatasheetsDownload NVMFS4C308NWFT1G Datasheet PDFPDF Icon
Price for NVMFS4C308NWFT1G

Specification of NVMFS4C308NWFT1G

Status
Active
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR)
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
17.2A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
18.2 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1670 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 30.6W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount, Wettable Flank
Supplier Device Package
5-DFNW (4.9x5.9) (8-SOFL-WF)
Package / Case
8-PowerTDFN, 5 Leads

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