NVMFWS004N10MCT1G

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Overview of NVMFWS004N10MCT1G

Part NumberNVMFWS004N10MCT1G
Manufactureronsemi
DescriptionMOSFET N-CH 100V 5DFN
DatasheetsDownload NVMFWS004N10MCT1G Datasheet PDFPDF Icon
Price for NVMFWS004N10MCT1G

Specification of NVMFWS004N10MCT1G

Status
Active
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR)
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
21A (Ta), 138A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.9mOhm @ 48A, 10V
Vgs(th) (Max) @ Id
4V @ 270A
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3600 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 164W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount, Wettable Flank
Supplier Device Package
5-DFNW (4.9x5.9) (8-SOFL-WF)
Package / Case
8-PowerTDFN, 5 Leads

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