NVMYS007N10MCLTWG

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Overview of NVMYS007N10MCLTWG

Part NumberNVMYS007N10MCLTWG
Manufactureronsemi
DescriptionPTNG 100V LL LFPAK4
DatasheetsDownload NVMYS007N10MCLTWG Datasheet PDFPDF Icon
Price for NVMYS007N10MCLTWG

Specification of NVMYS007N10MCLTWG

Status
Active
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR)
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
16A (Ta), 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
3V @ 141A
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 107W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LFPAK4 (5x6)
Package / Case
SOT-1023, 4-LFPAK

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