NVMYS1D6N04CLTWG

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Overview of NVMYS1D6N04CLTWG

Part NumberNVMYS1D6N04CLTWG
Manufactureronsemi
DescriptionT6 40V LL AIZU SINGLE NCH LFPAK
DatasheetsDownload NVMYS1D6N04CLTWG Datasheet PDFPDF Icon
Price for NVMYS1D6N04CLTWG

Specification of NVMYS1D6N04CLTWG

Status
Active
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR)
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
35A (Ta), 185A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3V @ 210A
Gate Charge (Qg) (Max) @ Vgs
71 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4301 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 107.1W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LFPAK4 (5x6)
Package / Case
SOT-1023, 4-LFPAK

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