NVMYS2D3N06CTWG

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Overview of NVMYS2D3N06CTWG

Part NumberNVMYS2D3N06CTWG
Manufactureronsemi
DescriptionT6 60V SL LFPAK4 5X6
DatasheetsDownload NVMYS2D3N06CTWG Datasheet PDFPDF Icon
Price for NVMYS2D3N06CTWG

Specification of NVMYS2D3N06CTWG

Status
Active
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR)
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
28.7A (Ta), 171A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 180A
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3584 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 134.4W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LFPAK4 (5x6)
Package / Case
SOT-1023, 4-LFPAK

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