NXH020P120MNF1PTG

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Overview of NXH020P120MNF1PTG

Part NumberNXH020P120MNF1PTG
Manufactureronsemi
DescriptionPIM F1 SIC HALFBRIDGE 1200V 20MO
DatasheetsDownload NXH020P120MNF1PTG Datasheet PDFPDF Icon
Price for NXH020P120MNF1PTG

Specification of NXH020P120MNF1PTG

Status
Active
Package
Tray
Supplier
onsemi
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual) Common Source
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25C
51A (Tc)
Rds On (Max) @ Id, Vgs
30mOhm @ 50A, 20V
Vgs(th) (Max) @ Id
4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
213.5nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
2420pF @ 800V
Power - Max
119W (Tj)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
-

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