NXPSC10650XQ

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Overview of NXPSC10650XQ

Part NumberNXPSC10650XQ
ManufacturerWeEn Semiconductors Co., Ltd
DescriptionDIODE SIL CARB 650V 10A TO220F
DatasheetsDownload NXPSC10650XQ Datasheet PDFPDF Icon
Price for NXPSC10650XQ

Specification of NXPSC10650XQ

Status
Last Time Buy
Package
Tube
Supplier
WeEn Semiconductors
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
250 A @ 650 V
Capacitance @ Vr, F
300pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2 Full Pack, Isolated Tab
Supplier Device Package
TO-220F
Operating Temperature - Junction
175C (Max)

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