RD3P08BBDTL

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Overview of RD3P08BBDTL

Part NumberRD3P08BBDTL
ManufacturerROHM Semiconductor
DescriptionMOSFET N-CH 100V 80A TO252
DatasheetsDownload RD3P08BBDTL Datasheet PDFPDF Icon
Price for RD3P08BBDTL

Specification of RD3P08BBDTL

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
80A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
11.6mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1940 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
119W (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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