RM1A4N150S6

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Overview of RM1A4N150S6

Part NumberRM1A4N150S6
ManufacturerRectron USA
DescriptionMOSFET N-CH 150V 1.4A SOT23-6
DatasheetsDownload RM1A4N150S6 Datasheet PDFPDF Icon
Price for RM1A4N150S6

Specification of RM1A4N150S6

Status
Active
Package
Tape & Reel (TR)
Supplier
Rectron USA
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25C
1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
480mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.56W (Tc)
Operating Temperature
-50C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-6
Package / Case
SOT-23-6

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