RM2A3P60S4

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Overview of RM2A3P60S4

Part NumberRM2A3P60S4
ManufacturerRectron USA
DescriptionMOSFET P-CH 60V 2.3A SOT223-3
DatasheetsDownload RM2A3P60S4 Datasheet PDFPDF Icon
Price for RM2A3P60S4

Specification of RM2A3P60S4

Status
Active
Package
Tape & Reel (TR)
Supplier
Rectron USA
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
180mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.5W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223-3
Package / Case
TO-261-4, TO-261AA

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