RM5N650IP

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Overview of RM5N650IP

Part NumberRM5N650IP
ManufacturerRectron USA
DescriptionMOSFET N-CHANNEL 650V 5A TO251
DatasheetsDownload RM5N650IP Datasheet PDFPDF Icon
Price for RM5N650IP

Specification of RM5N650IP

Status
Active
Package
Tube
Supplier
Rectron USA
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
460 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
49W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251
Package / Case
TO-251-3 Stub Leads, IPak

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