RN1406S,LF(D

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Overview of RN1406S,LF(D

Part NumberRN1406S,LF(D
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionTRANS PREBIAS NPN 50V 0.1A SMINI
DatasheetsDownload RN1406S,LF(D Datasheet PDFPDF Icon
Price for RN1406S,LF(D

Specification of RN1406S,LF(D

Status
Obsolete
Package
Tape & Reel (TR)
Supplier
Toshiba Semiconductor and Storage
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250A, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250 MHz
Power - Max
200 mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
S-Mini

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