RN1610(TE85L,F)

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Overview of RN1610(TE85L,F)

Part NumberRN1610(TE85L,F)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionTRANS 2NPN PREBIAS 0.3W SM6
DatasheetsDownload RN1610(TE85L,F) Datasheet PDFPDF Icon
Price for RN1610(TE85L,F)

Specification of RN1610(TE85L,F)

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
4.7kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250A, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Supplier Device Package
SM6

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