RN1707JE(TE85L,F)

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Overview of RN1707JE(TE85L,F)

Part NumberRN1707JE(TE85L,F)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionNPN X 2 BRT Q1BSR=10KOHM Q1BER=4
DatasheetsDownload RN1707JE(TE85L,F) Datasheet PDFPDF Icon
Price for RN1707JE(TE85L,F)

Specification of RN1707JE(TE85L,F)

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
Transistor Type
2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250A, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-553
Supplier Device Package
ESV

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