RN1909,LF(CT

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Overview of RN1909,LF(CT

Part NumberRN1909,LF(CT
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionNPNX2 BRT Q1BSR47KOHM Q1BER22KOH
DatasheetsDownload RN1909,LF(CT Datasheet PDFPDF Icon
Price for RN1909,LF(CT

Specification of RN1909,LF(CT

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
47kOhms
Resistor - Emitter Base (R2)
22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250A, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
US6

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