RN1911FETE85LF

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Overview of RN1911FETE85LF

Part NumberRN1911FETE85LF
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionTRANS 2NPN PREBIAS 0.1W ES6
DatasheetsDownload RN1911FETE85LF Datasheet PDFPDF Icon
Price for RN1911FETE85LF

Specification of RN1911FETE85LF

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250A, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6

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