RN2107MFV,L3F

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Overview of RN2107MFV,L3F

Part NumberRN2107MFV,L3F
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionTRANS PREBIAS PNP 50V 0.1A VESM
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Price for RN2107MFV,L3F

Specification of RN2107MFV,L3F

Status
Active
Package
Bulk
Supplier
Toshiba Semiconductor and Storage
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250A, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM

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