RQ3C150BCTB

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Overview of RQ3C150BCTB

Part NumberRQ3C150BCTB
ManufacturerROHM Semiconductor
DescriptionMOSFET P-CHANNEL 20V 30A 8HSMT
DatasheetsDownload RQ3C150BCTB Datasheet PDFPDF Icon
Price for RQ3C150BCTB

Specification of RQ3C150BCTB

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V
Rds On (Max) @ Id, Vgs
6.7mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
4800 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
20W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HSMT (3.2x3)
Package / Case
8-PowerVDFN

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