RQ6C065BCTCR

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Overview of RQ6C065BCTCR

Part NumberRQ6C065BCTCR
ManufacturerROHM Semiconductor
DescriptionMOSFET P-CH 20V 6.5A TSMT6
DatasheetsDownload RQ6C065BCTCR Datasheet PDFPDF Icon
Price for RQ6C065BCTCR

Specification of RQ6C065BCTCR

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V
Rds On (Max) @ Id, Vgs
21mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
1520 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.25W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TSMT6 (SC-95)
Package / Case
SOT-23-6 Thin, TSOT-23-6

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