RQ7L055BGTCR

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Overview of RQ7L055BGTCR

Part NumberRQ7L055BGTCR
ManufacturerROHM Semiconductor
DescriptionNCH 60V 5.5A, TSMT8, POWER MOSFE
DatasheetsDownload RQ7L055BGTCR Datasheet PDFPDF Icon
Price for RQ7L055BGTCR

Specification of RQ7L055BGTCR

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
29mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
7.6 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
460 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
1.1W (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TSMT8
Package / Case
8-SMD, Flat Lead

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