RS1E350BNTB1

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Overview of RS1E350BNTB1

Part NumberRS1E350BNTB1
ManufacturerROHM Semiconductor
DescriptionNCH 30V 80A POWER MOSFET: RS1E35
DatasheetsDownload RS1E350BNTB1 Datasheet PDFPDF Icon
Price for RS1E350BNTB1

Specification of RS1E350BNTB1

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
35A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
185 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
7900 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 35W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HSOP
Package / Case
8-PowerTDFN

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