RS6L120BGTB1

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Overview of RS6L120BGTB1

Part NumberRS6L120BGTB1
ManufacturerROHM Semiconductor
DescriptionNCH 60V 150A, HSOP8, POWER MOSFE
DatasheetsDownload RS6L120BGTB1 Datasheet PDFPDF Icon
Price for RS6L120BGTB1

Specification of RS6L120BGTB1

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
120A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3520 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
104W (Tj)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HSOP
Package / Case
8-PowerTDFN

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