SCT2120AFC

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Overview of SCT2120AFC

Part NumberSCT2120AFC
ManufacturerROHM Semiconductor
DescriptionSICFET N-CH 650V 29A TO220AB
DatasheetsDownload SCT2120AFC Datasheet PDFPDF Icon
Price for SCT2120AFC

Specification of SCT2120AFC

Status
Obsolete
Package
Tube
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
156mOhm @ 10A, 18V
Vgs(th) (Max) @ Id
4V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 18 V
Vgs (Max)
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
165W (Tc)
Operating Temperature
175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

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