SCT3017ALHRC11

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Overview of SCT3017ALHRC11

Part NumberSCT3017ALHRC11
ManufacturerROHM Semiconductor
DescriptionSICFET N-CH 650V 118A TO247N
DatasheetsDownload SCT3017ALHRC11 Datasheet PDFPDF Icon
Price for SCT3017ALHRC11

Specification of SCT3017ALHRC11

Status
Active
Series
Automotive, AEC-Q101
Package
Tube
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
118A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
22.1mOhm @ 47A, 18V
Vgs(th) (Max) @ Id
5.6V @ 23.5mA
Gate Charge (Qg) (Max) @ Vgs
172 nC @ 18 V
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
2884 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
427W
Operating Temperature
175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3

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