SCTH100N65G2-7AG

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Overview of SCTH100N65G2-7AG

Part NumberSCTH100N65G2-7AG
ManufacturerSTMicroelectronics
DescriptionSICFET N-CH 650V 95A H2PAK-7
DatasheetsDownload SCTH100N65G2-7AG Datasheet PDFPDF Icon
Price for SCTH100N65G2-7AG

Specification of SCTH100N65G2-7AG

Status
Active
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
162 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3315 pF @ 520 V
FET Feature
-
Power Dissipation (Max)
360W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
H2PAK-7
Package / Case
TO-263-8, DPak (7 Leads + Tab), TO-263CA

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