SCTH35N65G2V-7

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Overview of SCTH35N65G2V-7

Part NumberSCTH35N65G2V-7
ManufacturerSTMicroelectronics
DescriptionSICFET N-CH 650V 45A H2PAK-7
DatasheetsDownload SCTH35N65G2V-7 Datasheet PDFPDF Icon
Price for SCTH35N65G2V-7

Specification of SCTH35N65G2V-7

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V, 20V
Rds On (Max) @ Id, Vgs
67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 20 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
H2PAK-7
Package / Case
TO-263-8, DPak (7 Leads + Tab), TO-263CA

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