SCTL35N65G2V

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Overview of SCTL35N65G2V

Part NumberSCTL35N65G2V
ManufacturerSTMicroelectronics
DescriptionTRANS SJT N-CH 650V PWRFLAT HV
DatasheetsDownload SCTL35N65G2V Datasheet PDFPDF Icon
Price for SCTL35N65G2V

Specification of SCTL35N65G2V

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 20 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
417W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerFlat (8x8) HV
Package / Case
8-PowerVDFN

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