SCTW60N120G2

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Overview of SCTW60N120G2

Part NumberSCTW60N120G2
ManufacturerSTMicroelectronics
DescriptionDISCRETE
Price for SCTW60N120G2

Specification of SCTW60N120G2

Status
Active
Package
Bulk
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
52mOhm @ 30A, 18V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
94 nC @ 8 V
Vgs (Max)
+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds
1969 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
389W (Tc)
Operating Temperature
-55C ~ 200C (TJ)
Mounting Type
Through Hole
Supplier Device Package
HiP247
Package / Case
TO-247-3

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