SCTW70N120G2V

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Overview of SCTW70N120G2V

Part NumberSCTW70N120G2V
ManufacturerSTMicroelectronics
DescriptionTRANS SJT N-CH 1200V 91A HIP247
DatasheetsDownload SCTW70N120G2V Datasheet PDFPDF Icon
Price for SCTW70N120G2V

Specification of SCTW70N120G2V

Status
Active
Package
Tube
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
91A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
30mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3540 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
547W (Tc)
Operating Temperature
-55C ~ 200C (TJ)
Mounting Type
Through Hole
Supplier Device Package
HiP247
Package / Case
TO-247-3

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