SCTWA10N120

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Overview of SCTWA10N120

Part NumberSCTWA10N120
ManufacturerSTMicroelectronics
DescriptionIC POWER MOSFET 1200V HIP247
Price for SCTWA10N120

Specification of SCTWA10N120

Status
Obsolete
Package
Tube
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
690mOhm @ 6A, 20V
Vgs(th) (Max) @ Id
3.5V @ 250A (Typ)
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55C ~ 200C (TJ)
Mounting Type
Through Hole
Supplier Device Package
HiP247 Long Leads
Package / Case
TO-247-3

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