SCTWA35N65G2V-4

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Overview of SCTWA35N65G2V-4

Part NumberSCTWA35N65G2V-4
ManufacturerSTMicroelectronics
DescriptionDISCRETE
Price for SCTWA35N65G2V-4

Specification of SCTWA35N65G2V-4

Status
Active
Package
Bulk
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V, 20V
Rds On (Max) @ Id, Vgs
67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 20 V
Vgs (Max)
+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
240W (Tc)
Operating Temperature
-55C ~ 200C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4

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