SCTWA30N120

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Overview of SCTWA30N120

Part NumberSCTWA30N120
ManufacturerSTMicroelectronics
DescriptionIC POWER MOSFET 1200V HIP247
DatasheetsDownload SCTWA30N120 Datasheet PDFPDF Icon
Price for SCTWA30N120

Specification of SCTWA30N120

Status
Active
Package
Tube
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
3.5V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
270W (Tc)
Operating Temperature
-55C ~ 200C (TJ)
Mounting Type
Through Hole
Supplier Device Package
HiP247 Long Leads
Package / Case
TO-247-3

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