SCTW40N120G2V

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Overview of SCTW40N120G2V

Part NumberSCTW40N120G2V
ManufacturerSTMicroelectronics
DescriptionSILICON CARBIDE POWER MOSFET 120
DatasheetsDownload SCTW40N120G2V Datasheet PDFPDF Icon
Price for SCTW40N120G2V

Specification of SCTW40N120G2V

Status
Active
Package
Tube
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1233 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
278W (Tc)
Operating Temperature
-55C ~ 200C (TJ)
Mounting Type
Through Hole
Supplier Device Package
HiP247
Package / Case
TO-247-3

Parts Information

Fields marked with a * are required
Part Number*ManufacturerDescriptionQuantity*Target Unit Price(USD)

Contact Information

Fields marked with a * are required

Introduction

SCTW40N120G2V is in Stock, Find SCTW40N120G2V electronics components stock, Technical information, Inventory and Price here at Ic-find.com, send us an inquiry for SCTW40N120G2V to get the price and lead time now! We can offer fast shipment via DHL/FedEx/UPS.

Email us: [email protected] or RFQ SCTW40N120G2V Online.

FAQ

  • 1 How to place an order?[Click to Expand]

  • 2 What payment methods do you offer?[Click to Expand]

  • 3 How do you handle the shipment?[Click to Expand]

  • 4 I can't find a part on IC-find, what should I do?[Click to Expand]

Recommend Products

Your RFQ Preview

Fields marked with a * are required
Part Number*ManufacturerDescriptionQuantity*Target Unit Price(USD)
Continue Shopping
Go RFQ Page