SCTW100N65G2AG

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Overview of SCTW100N65G2AG

Part NumberSCTW100N65G2AG
ManufacturerSTMicroelectronics
DescriptionSICFET N-CH 650V 100A HIP247
DatasheetsDownload SCTW100N65G2AG Datasheet PDFPDF Icon
Price for SCTW100N65G2AG

Specification of SCTW100N65G2AG

Status
Active
Series
Automotive, AEC-Q101
Package
Tube
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
162 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3315 pF @ 520 V
FET Feature
-
Power Dissipation (Max)
420W (Tc)
Operating Temperature
-55C ~ 200C (TJ)
Mounting Type
Through Hole
Supplier Device Package
HiP247
Package / Case
TO-247-3

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