SI1032X-T1-E3

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Overview of SI1032X-T1-E3

Part NumberSI1032X-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 20V 200MA SC89-3
Price for SI1032X-T1-E3

Specification of SI1032X-T1-E3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
5Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
0.75 nC @ 4.5 V
Vgs (Max)
6V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
300mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-89-3
Package / Case
SC-89, SOT-490

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