SI1035X-T1-E3

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Overview of SI1035X-T1-E3

Part NumberSI1035X-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET N/P-CH 20V SOT563F
Price for SI1035X-T1-E3

Specification of SI1035X-T1-E3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25C
180mA, 145mA
Rds On (Max) @ Id, Vgs
5Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
400mV @ 250A (Min)
Gate Charge (Qg) (Max) @ Vgs
0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
250mW
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
SC-89 (SOT-563F)

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