SI1070X-T1-E3

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Overview of SI1070X-T1-E3

Part NumberSI1070X-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 30V 1.2A SC89-6
DatasheetsDownload SI1070X-T1-E3 Datasheet PDFPDF Icon
Price for SI1070X-T1-E3

Specification of SI1070X-T1-E3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
99mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id
1.55V @ 250A
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
385 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
236mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-89 (SOT-563F)
Package / Case
SOT-563, SOT-666

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