SI1417EDH-T1-E3

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Overview of SI1417EDH-T1-E3

Part NumberSI1417EDH-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 12V 2.7A SC70-6
DatasheetsDownload SI1417EDH-T1-E3 Datasheet PDFPDF Icon
Price for SI1417EDH-T1-E3

Specification of SI1417EDH-T1-E3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25C
2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
85mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id
450mV @ 250A (Min)
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 4.5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-70-6
Package / Case
6-TSSOP, SC-88, SOT-363

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